- 您现在的位置：买卖IC网 > PDF目录81563 > MMBD1704AS62Z (FAIRCHILD SEMICONDUCTOR CORP) 0.05 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MMBD1704AS62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.05 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 43K |
| 代理商： | MMBD1704AS62Z |
MMBD1701/A
/
1703/A
/
1704/A
/
1705/A
MMBD1700 series, Rev. B1
Small Signal Diodes
MMBD1701/A / 1703/A / 1704/A / 1705/A
MARKING
MMBD1701 85
MMBD1701A 85A
MMBD1703 87
MMBD1703A 87A
MMBD1704 88
MMBD1704A 88A
MMBD1705 89
MMBD1705A 89A
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
50
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
250
mA
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
85
3
1
2
SOT-23
Connection Diagrams
1701
1703
1704
1705
11
3
2
1
2
3
1
Sym bol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 5.0 A
30
V
F
Forward Voltage
I
F = 10 A
I
F = 100 A
I
F = 1.0 m A
I
F = 10 m A
I
F = 20 m A
I
F = 50 m A
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
V
I
R
Reverse Current
V
R = 20 V
50
nA
C
T
Total Capacitance
V
R = 0 , f = 1.0 M H z
1.0
pF
t
rr
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
I
F = IR = 10 m A , IRR = 1.0 m A ,
R
L = 100
I
F = IR = 10 m A , IRR = 1.0 m A ,
R
L = 100
0.7
1.0
ns
2NC
相关PDF资料 |
PDF描述 |
|---|---|
| MBR20045CT | 100 A, 45 V, SILICON, RECTIFIER DIODE |
| MAZ4047N0L | 4.52 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MAZ4200N0M | 19.95 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MAZ72400A | 23.575 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MAZ80360H | 3.7 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD1705 | 功能描述:整流器 High Conductance Low Leakage Diode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD1705_Q | 功能描述:整流器 High Conductance Low Leakage Diode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD1705A | 功能描述:整流器 High Cond Lo Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD172SE | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| MMBD193 | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR DIODE |
发布紧急采购，3分钟左右您将得到回复。