- 您现在的位置：买卖IC网 > PDF目录39704 > MMBD2010T1 (ON SEMICONDUCTOR) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MMBD2010T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 116K |
| 代理商： | MMBD2010T1 |
MMBD1010LT1 MMBD2010T1 MMBD3010T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 A)
V(BR)
30
—
V
Reverse Voltage Leakage Current (VR = 75 V)(2)
IR
—
500
pA
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
VF
—
850
950
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD
—
2.0
pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr
—
3.0
s
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a non–forward–biased condition.
Figure 1. Recovery Time Equivalent Test Circuit
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp trr
+10 V
2 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
相关PDF资料 |
PDF描述 |
|---|---|
| MMBD352LT1 | SILICON, UHF BAND, MIXER DIODE, TO-236AB |
| MMBD4148CCL99Z | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD4148CCS62Z | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD4148SEL99Z | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| MMBD4148TS | 0.15 A, 100 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD202CAW | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| MMBD202CC | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| MMBD202CCW | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| MMBD204SEW | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| MMBD217SEW | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR SWITCHING DIODE |
发布紧急采购，3分钟左右您将得到回复。