- 您现在的位置：买卖IC网 > PDF目录80873 > MMBD3010T1 (ON SEMICONDUCTOR) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MMBD3010T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 116K |
| 代理商： | MMBD3010T1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Switching Diode
Part of the GreenLine
Portfolio of devices with energy–conserving traits.
This switching diode has the following features:
Very Low Leakage (≤ 500 pA) promotes extended battery life by decreas-
ing energy waste. Guaranteed leakage limit is for each diode in the pair
contingent upon the other diode being in a non–forward–biased condition.
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
Medium–Speed Switching
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
Vdc
Peak Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM
(surge)
500
mA
DEVICE MARKING
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1, MMBD3010T1
MMBD2010T1
Derate above 25
°C MMBD1010LT1, MMBD3010T1
MMBD2010T1
PD
225
150
1.8
1.2
mW
mW/
°C
Thermal Resistance Junction to Ambient
MMBD1010LT1, MMBD3010T1
MMBD2010T1
R
θJA
556
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
GreenLine is a trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Order this document
by MMBD1010LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
3
CATHODE
ANODE
1
2
ANODE
MMBD1010LT1
MMBD2010T1
MMBD3010T1
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
Motorola Preferred Devices
1
2
3
CASE 318D-04, STYLE 3
SC–59
CASE 419-02, STYLE 5
SC–70/SOT–323
MMBD1010LT1
MMBD2010T1
1
2
3
2
1
3
MMBD3010T1
Motorola, Inc. 1997
REV 1
相关PDF资料 |
PDF描述 |
|---|---|
| MMBZ4715/E9 | 36 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MMSZ4698/D4 | 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| MBR4060PT | 20 A, 60 V, SILICON, RECTIFIER DIODE |
| MBRB1535CT | 7.5 A, SILICON, RECTIFIER DIODE |
| MBR1645 | 16 A, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD301L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES |
| MMBD301LT1 | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301LT1G | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301LT3 | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301LT3G | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。