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| 型号： | MMBD301LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 105K |
| 描述： | DIODE SCHOTTKY 30V 200MW SOT23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 - 单 |
| 电压 - 峰值反向(最大)： | 30V |
| 电容@ Vr, F： | 1.5pF @ 15V，1MHz |
| 功率耗散（最大）： | 200mW |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1567 (CN2011-ZH PDF) |
| 其它名称： | MMBD301LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2013
May, 2013 ?
Rev. 7
1
Publication Order Number:
MBD301/D
MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high?efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low?cost, high?volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
?
Extremely Low Minority Carrier Lifetime ?
15 ps (Typ)
?
Very Low Capacitance ?
1.5 pF (Max) @ V
R
= 15 V
?
Low Reverse Leakage ?
I
R
= 13 nAdc (Typ) MBD301, MMBD301
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
200 (Max)
mA
Total Device Dissipation
@ TA
= 25
°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
PF
280
200
2.8
2.0
MW
mW/°C
Operating Junction
Temperature Range
TJ
?55 to
+125
°C
Storage Temperature Range
Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
30 VOLTS
SILICON HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
SOT?23 (TO?236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO?92 2?Lead
CASE 182
STYLE 1
SOT?23
TO?92
MARKING DIAGRAMS
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
4T M
A = Assembly Location
Y = Year
WW = Work Week
4T = Device Code (SOT?23)
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MBD
301
AYWW
SOT?23
TO?92
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD301LT3 | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301LT3G | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301LTI | 制造商:- - 功能描述:Detector Diode, Sot-23 制造商:Motorola Inc 功能描述:Detector Diode, Sot-23 制造商:ON Semiconductor 功能描述:Detector Diode, Sot-23 |
| MMBD301M3T5G | 功能描述:肖特基二极管与整流器 SS SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD301-TP | 功能描述:肖特基二极管与整流器 Diode 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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