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参数资料
| 型号： | MMBD352LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Dual Hot Carrier Mixer Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE, TO-236AB |
| 封装： | CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 41K |
| 代理商： | MMBD352LT1 |
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
SOT–23 (TO–236AB)
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
ON Semiconductor
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN
: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone
: 81–3–5740–2700
Email
: r14525@onsemi.com
ON Semiconductor Website
: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MMBD352LT1/D
Thermal Clad is a trademark of the Bergquist Company.
Literature Fulfillment
:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone
: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax
: 303–675–2176 or 800–344–3867
Toll Free USA/Canada
Email
: ONlit@hibbertco.com
N. American Technical Support
: 800–282–9855 Toll Free USA/Canada
相关PDF资料 |
PDF描述 |
|---|---|
| MMBD352WT1 | Dual Shottky Barrier Diode |
| MMBD355LT1 | Dual Hot Carrier Mixer Diodes |
| MMBD352 | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | Dual Hot Carrier Mixer Diodes |
| MMBD352WT1 | Dual Schottky Barrier Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD352LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Hot Carrier Mixer Diodes |
| MMBD352LT1G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD352LT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Hot Carrier Mixer Diodes |
| MMBD352LT3 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD352LT3G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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