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参数资料
| 型号： | MMBD352LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 124K |
| 描述： | DIODE SWITCH DUAL 7V SOT23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 - 1 对串联 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 225mW |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | MMBD352LT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 8
1
Publication Order Number:
MMBD352LT1/D
MMBD352LT1G,
MMBD353LT1G,
NSVMMBD353LT1G,
MMBD354LT1G,
NSVMMBD354LT1G,
MMBD355LT1G
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra?fast switching
circuits.
Features
?
Very Low Capacitance ?
Less Than 1.0 pF @ Zero V
?
Low Forward Voltage ?
0.5 V (Typ) @ I
F
= 10 mA
?
AEC Qualified and PPAP Capable
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1)
TA
= 25
?C
Derate above 25?C
PD
225
1.8
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
556
?C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
?C
1. FR?5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
Mxx M
Mxx = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MMBD352LT1G
STYLE 11
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD353LT1G
NSVMMBD353LT1G
STYLE 19
1
CATHODE
3
CATHODE/ANODE
2
ANODE
MMBD354LT1G
NSVMMBD354LT1G
STYLE 9
3
CATHODE
1 ANODE
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1G
STYLE 12
2 ANODE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD352LT1G_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Hot Carrier Mixer Diodes |
| MMBD352LT3 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD352LT3G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD352W | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352WT1 | 功能描述:肖特基二极管与整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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