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参数资料
| 型号： | MMBD352T/R7 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, VHF BAND, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 128K |
| 代理商： | MMBD352T/R7 |
PAGE . 1
STAD-MAR.23.2007
MMBD101/MMBD352/MMBD353/MMBD354/MMBD355
Fig.15
COMMON ANODE
Fig.16
COMMON CATHODE
Fig.17
SERIES
Fig.14
SINGLE
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
250mWatts
FEATURES
Low Capacitance, Minimizing Insertion Losses in VHF Applications
Low V
F : 0.5V (Typ) at IF = 10mA
Extremely Fast Switching Speed
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-23 plastic case.
Terminals : Solderable per MIL-STD-750,Method 2026
Weight: approximately 0.008gram
POWER
MAXIMUM RATINGS
NOTE:
1. FR-5 Board = 1.0X0.75X0.062 in.
THERMAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD352W | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352WT1 | 功能描述:肖特基二极管与整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD352WT1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Schottky Barrier Diode |
| MMBD352WT1G | 功能描述:肖特基二极管与整流器 7V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD353 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
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