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| 型号： | MMBD352WT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 描述： | DIODE SCHOTTKY DUAL 7V SOT-323 |
| 产品变化通告： | Copper Wire Change 29/Oct/2009 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 - 1 对串联 |
| 电压 - 峰值反向(最大)： | 7V |
| 电容@ Vr, F： | 1pF @ 0V，1MHz |
| 功率耗散（最大）： | 200mW |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 5
1
Publication Order Number:
MMBD352WT1/D
MMBD352WT1G,
NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultra?fast switching
circuits.
Features
?
Very Low Capacitance ?
Less Than 1.0 pF @ 0 V
?
Low Forward Voltage ?
0.5 V (Typ) @ I
F
= 10 mA
?
AEC Qualified and PPAP Capable
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1)
TA
= 25
?C
Derate above 25?C
PD
200
1.6
mW
mW/?C
Thermal Resistance,
Junction?to?Ambient
RJA
625
?C/W
Total Device Dissipation Alumina
Substrate (Note 2)
TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance,
Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
?C
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOT?323 (SC?70)
CASE 419
STYLE 9
1
ANODE
3
CATHODE/ANODE
2
CATHODE
Device Package Shipping?
ORDERING INFORMATION
MMBD352WT1G SOT?323
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M5 M
M5 = Specific Device Code
M = Date Code
= Pb?Free Package
1
(Note: Microdot may be in either location)
NSVMMBD352WT1G SOT?323
(Pb?Free)
3,000 /
Tape & Reel
相关PDF资料 |
PDF描述 |
|---|---|
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| MMBD4148TW-7 | DIODE SW TRIPLE 75V 200MW SOT363 |
| MMBD4448DW-7 | DIODE SWTCH 75V 200MW SOT-363 |
| MMBD4448HSDW-7 | DIODE SWITCHING ARRAY 80V SOT363 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD353 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD353LT1 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD353LT1G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD353LT3 | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MMBD353LT3G | 功能描述:整流器 7V 225mW Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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