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参数资料
| 型号： | MMBD4448-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 75K |
| 描述： | DIODE SWITCH 75V 350MW SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Wire Change 16/Sept/2008 |
| 其它图纸： | SOT-23 Top |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 75V |
| 电流 - 平均整流 (Io)： | 250mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 2.5µA @ 75V |
| 电容@ Vr, F： | 4pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1596 (CN2011-ZH PDF) |
| 其它名称： | MMBD4448-FDIDKR |
MMBD4448
Document number: DS12011 Rev. 17 - 2
2 of 4
www.diodes.com
February 2011
? Diodes Incorporated
MMBD4448
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current (Note 4)
IFM
500 mA
Average Rectified Output Current (Note 4)
IO
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
75
?
V
IR
= 2.5
μA
Forward Voltage
VF
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Reverse Current (Note 5)
IR
?
2.5
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= 150
°C
VR
= 25V, T
J
= 150
°C
VR
= 20V
Total Capacitance
CT
?
4.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0
100
120
80
160
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)A
Fig. 1 Power Derating Curve
200
300
500
40
400
Note 4
10
100
1,000
1
0.1
0
1.6
1.2
0.4
0.8
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| MMBD4448H-7-F | DIODE SWITCH 80V 350MW SOT23-3 |
| MMBD4448HW-7-F | DIODE SWITCH 80V 200MW SC70-3 |
| MMBD4448W-7-F | DIODE SWITCH 75V 200MW SC70-3 |
| MMBD4448 | DIODE 75V 200MA SOT23 |
| MMBD6050LT3G | DIODE SWITCHING 70V SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448ADW | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Plastic-Encapsulate Diode |
| MMBD4448AQW | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Plastic-Encapsulate Diode |
| MMBD4448BPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY |
| MMBD4448CDW | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:Plastic-Encapsulate Diode |
| MMBD4448DW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE |
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