- 您现在的位置：买卖IC网 > PDF目录215859 > MMBD4448HCQWP (MICRO COMMERCIAL COMPONENTS) 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | MMBD4448HCQWP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 669K |
| 代理商： | MMBD4448HCQWP |
MMBD4448HAQW/
200mW
Switching Diodes
Features
Fast Switching Speed
For General Purpose Switching Applications
High Conductance, Power Dissipation
Ultra-Small Surface Mount Package
Maximum Ratings
Symbol
Rating
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
80
V
VR(RMS)
RMS Reverse Voltage
57
V
IFM
Forward Continuous Current
500
mA
IO
Average Rectified Output Current
250
mA
IFSM
Peak Forward Surge Current @1.0
μs
@1.0s
4.0
2.0
A
RθJA
Thermal Resistance Junction to Ambient
625
℃/W
PD
Power dissipation
200
mW
TJ
Junction Temperature
150
℃
TSTG
Storage Temperature
-65 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Test Conditions
V(BR)
Reverse Breakdown Voltage
80V
---
IR=100
μA
IR
Reverse Voltage Leakage
Current
---
100nA
50
μA
30
μA
25nA
VR=70V
VR=75V, TJ=150
℃
VR=25V, TJ=150
℃
VR=20V
VF
Forward Voltage
0.62
---
0.72V
0.855V
1.0V
1.25V
IF=5.0mA
IF=10mA
IF=50mA
IF=150mA
CT
Total Capacitance
---
3.5pF
VR=6V, f=1MHZ
trr
Reverse Recovery Time
---
4.0ns
IF=5mA,
VR=6V
www.mccsemi.com
Revision: 2
2006/05/13
SOT-363
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
L
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
ADW/CDW/SDW/
A
1
A
2
C
2
C
1
C
2
C
1
C
1
A
3
C
2
A
1
C
3
A
2
C
1
C
2
A
2
A
1
A
2
A
1
C
2
C
1
NC
A
C
3
C
4
AC
1
AC
2
C
2
A
1
A
2
C
1
Marking: KA6
MMBD4448HADW
Marking: KA5
MMBD4448HAQW
Marking: KA7
MMBD4448HCDW
Marking: KAA
MMBD4448HTW
Marking: KAB
MMBD4448HSDW
DIMENSIONS
Marking: KA4
MMBD4448HCQW
A
2
A
1
C
A
3
A
4
CQW/TW
TM
Micro Commercial Components
NC
A
2
A
2
1 of 4
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB30H90CT-E3/81 | 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MA1.5KE150CAE3 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MASMLJ22CAE3 | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MASMLJ24CE3 | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MASMLJ85CE3 | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD4448HCQWPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY |
| MMBD4448HCQW-TP | 功能描述:DIODE SWITCHING 200MW 80V SOT363 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| MMBD4448HCT-7 | 制造商:Diodes Incorporated 功能描述:SWITCHING DIODE - Tape and Reel |
| MMBD4448HPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE ARRAY |
| MMBD4448HSDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE ARRAY |
发布紧急采购，3分钟左右您将得到回复。