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参数资料
| 型号： | MMBD717CW |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封装： | MINIATURE, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 131K |
| 代理商： | MMBD717CW |
PAGE . 1
STAD-FEB.15.2005
COMMON ANODE SCHOTTKY BARRIER DIODES
VOLTAGE
20 Volts
CURRENT
0.2 Amperes
.087(2.2)
.054(1.35)
.056(1.40)
.006(.15)
.016(.40)
.087(2.2)
.044(1.1)
.004(.10)MIN.
.070(1.8)
.045(1.15)
.047(1.20)
.004(.10)MAX.
.002(.05)
.078(.20)
.078(2.0)
.035(0.9)
SOT-323
Unit: inch (mm)
DATA SHEET
MMBD717W/AW/CW/SW
FEATURES
Th ese Schottky barrier diodes are designed for high speed switching
applicatons, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss.
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
MECHANICAL DATA
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202G, Method 208
Approx. Weight: 4.8mg
Pb free: 99% Sn above can meet Rohs environment substance
directive request
MAXIMUM RATINGS (TJ = 125
OC unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
20
Volts
Forward Power Dissipation @ TA = 25
OC
Derate above 25
OC
PF
200
1.6
mW
mW/
OC
Operating Junction Temperature Range
TJ
-50 to 150
OC
Storage Temperature Range
TSTG
-50 to 150
OC
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
TYPE
MMBD717W
MMBD717AW
MMBD717CW
MMBD717SW
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse Breakdown Voltage (IR=10u A)
V(BR)R
70
-
V
Total Capacitance (VR=1.0V,f=1.0MHz)
CT
-
0.2
uA
Reverse Leakage (V R=10V)
(For each individual diode while the second
diode is unbiased)
IR
-
0.5
1.0
V
Forward Voltage (IF=1.0 m Adc)
VF
-
1.0
Pf
Circuit Figure
SINGLE
COMMONANODE
COMMONCATHODE
SERIES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD717CW-T1 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD717LT1 | 功能描述:肖特基二极管与整流器 20V 200mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD717LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES |
| MMBD717LT1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Common Anode Schottky Barrier Diodes |
| MMBD717LT1G | 功能描述:肖特基二极管与整流器 20V 200mW Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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