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参数资料
| 型号： | MMBD770WST/R7 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.25 A, 70 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 168K |
| 代理商： | MMBD770WST/R7 |
PAGE . 1
REV.0.1-FEB.23.2009
DATA SHEET
MMBD770WS
SURFACE MOUNT SCHOTTKY DIODES
VOLTAGE
70 Volts
200mA
FEATURES
Extremely low minority carrier lifetime
Low capacitance ( 0.4pF @ 20V typical )
Low reverse leakage ( 30nA @ 35V typical )
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0048 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
POWER
.078(1.95)
.038(.95)
.107(2.7)
.014(.35)
.006(.15)
.054(1.35)
.068(1.75)
.027(.70)
.090(2.3)
.012(.30)MIN.
.009(.25)
.002(.05)
.045(1.15)
SOD-323
Unit: inch (mm)
.
In compliance with EU RoHS 2002/95/EC directives
Surface mount package ideally suited for automatic insertion
Marking : 770
PARAMETER
SYMBOL
VALUE
UNIT
Maximum Reverse Voltage
VR
70
V
Peak Reverse Voltage
VRRM
70
V
Continuous Forward Current
IF
0.25
A
Power Dissipation
(1)
PTOT
180
mW
Thermal Resistance , Junction to Ambient
(1)
RQJ A
556
J/W
Junction Temperature
TJ
-55 to 125
J
Storage Temperature
TSTG
-55 to 150
J
NotesG 1. FR-4 Board = 70 × 60 × 1mm.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Breakdown Voltage
V(BR)
IR=10uA
70
-
V
Reverse Current
IR
VR =35V
-
0.2
uA
Forward Voltage
VF
IF =1mA
IF =10mA
-
0.5
1.0
V
Typical Capacitance
CT
VR=20V, f =1MHz
-
1.0
pF
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