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参数资料
| 型号： | MMBF0202PLT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | LEAD FREE, CASE 318-08, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 164K |
| 代理商： | MMBF0202PLT1G |
MMBF0202PLT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
V(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
mAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
±100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
0.9
2.0
1.4
3.5
W
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
600
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
50
pF
Output Capacitance
(VDS = 5.0 V)
Coss
45
Transfer Capacitance
(VDG = 5.0 V)
Crss
20
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
(VDD = 15 Vdc,
RL = 75 W, ID = 200 mAdc,
VGEN = 10 V, RG = 6.0 W)
td(on)
2.5
ns
Rise Time
tr
1.0
TurnOff Delay Time
td(off)
16
Fall Time
tf
8.0
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
QT
2700
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
IS
0.3
A
Pulsed Current
ISM
0.75
Forward Voltage (Note 3)
VSD
1.5
V
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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