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| 型号： | MMBF170LT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 500MA SOT-23 |
| 产品变化通告： | LTB Notification 03/Jan/2008 Wire Change for SOT23 Pkg 26/May/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, N ? Channel SOT ? 23
Features
? NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS
http://onsemi.com
500 mA, 60 V
R DS(on) = 5 W
Rating
Symbol
Value
Unit
Drain ? Source Voltage
Drain ? Gate Voltage
V DSS
V DGS
60
60
Vdc
Vdc
SOT ? 23
CASE 318
STYLE 21
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current ? Continuous
? Pulsed
V GS
V GSM
I D
I DM
± 20
± 40
0.5
0.8
Vdc
Vpk
Adc
N ? Channel
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR ? 5 Board
(Note 1.) T A = 25 ° C
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
Junction and Storage Temperature
P D
R q JA
T J , T stg
225
1.8
556
? 55 to
+150
mW
mW/ ° C
° C/W
° C
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR ? 5 = 1.0 0.75 0.062 in.
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z M G
G
Gate 1
2 Source
6Z = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 9
1
Publication Order Number:
MMBF170LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF170LT3G | 功能描述:MOSFET 20V 500mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF2201NT1 | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF2201NT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
| MMBF2201NT1G | 功能描述:MOSFET 20V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
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