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参数资料
| 型号： | MMBF175LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, TO-236AB, SOT-23, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 120K |
| 代理商： | MMBF175LT1 |
JFET Chopper
PChannel Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Gate Voltage
VDG
25
V
Reverse Gate Source Voltage
VGS(r)
25
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
°C
DEVICE MARKING
MMBFJ175LT1 = 6W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(VDS = 0, ID = 1.0 A)
V(BR)GSS
30
V
Gate Reverse Current
(VDS = 0 V, VGS = 20 V)
IGSS
1.0
nA
Gate Source Cutoff Voltage
(VDS = 15, ID = 10 nA)
VGS(OFF)
3.0
6.0
V
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (2)
(VGS = 0, VDS = 15 V)
IDSS
7.0
60
mA
Drain Cutoff Current
(VDS = 15 V, VGS = 10 V)
ID(off)
1.0
nA
Drain Source On Resistance
(ID = 500 mA)
rDS(on)
125
W
Input Capacitance
VDS = 0, VGS = 10 V
Ciss
11
Reverse Transfer Capacitance
VDS = 0, VGS = 10 V
f = 1.0 MHz
Crss
5.5
pF
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 2
815
Publication Order Number:
MMBF175LT1/D
MMBFJ175LT1
ON Semiconductor Preferred Device
1
2
3
CASE 318 08, STYLE 10
SOT 23 (TO 236AB)
1 DRAIN
2 SOURCE
3
GATE
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