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| 型号： | MMBF2201NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 300MA SOT-323 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-323, SOT-416 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 300mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 45pF @ 5V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MMBF2201NT1GOSDKR |
MMBF2201N, NVF2201N
Power MOSFET
300 mAmps, 20 Volts
N ? Channel SC ? 70/SOT ? 323
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
d c ? d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d
battery ? powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
http://onsemi.com
300 mAMPS, 20 VOLTS
R DS(on) = 1 W
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SC ? 70/SOT ? 323 Surface Mount Package Saves
Board Space
? NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
1
N ? Channel
3
?
Qualified and PPAP Capable*
These Devices are Pb ? Free and are RoHS Compliant
2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
MARKING DIAGRAM
AND PIN ASSIGNMENT
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 70 ° C
? Pulsed Drain Current (t p ≤ 10 m s)
V DSS
V GS
I D
I D
I DM
20
± 20
300
240
750
Vdc
Vdc
mAdc
1
2
3
SC ? 70/SOT ? 323
CASE 419
STYLE 8
3
Drain
N1 M G
G
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
150
1.2
? 55 to 150
mW
mW/ ° C
° C
1 2
Gate Source
N1 = Device Code
Thermal Resistance, Junction ? to ? Ambient R q JA 833 ° C/W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
MMBF2201NT1G
NVF2201NT1G*
SOT ? 323
(Pb ? Free)
SOT ? 323
(Pb ? Free)
3000 / Tape &
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 7
1
Publication Order Number:
MMBF2201NT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF2201PT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
| MMBF2202PT1 | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF2202PT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBF2202PT1G | 功能描述:MOSFET 20V 300mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMBF2202PT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS |
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