- 您现在的位置：买卖IC网 > PDF目录97606 > MMBF4119S62Z (FAIRCHILD SEMICONDUCTOR CORP) N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | MMBF4119S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件页数： | 1/5页 |
| 文件大小： | 128K |
| 代理商： | MMBF4119S62Z |
G
D
S
PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
N-Channel Switch
This device is designed for low current DC and audio applications.
These devices provide excellent performance as input stages for
sub-picoamp instrumentation or any high impedance signal
sources. Sourced from Process 53.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
40
V
VGS
Gate-Source Voltage
- 40
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
G
S
D
TO-92
SOT-23
Mark: 61A / 61C / 61E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTE: Source & Drain
are interchangeable
PN41
17
/
41
18
/
41
19
/
MMBF41
17
/
41
18
/
41
19
Symbol
Characteristic
Max
Units
PN4117-4119
*MMBF4117-4119
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| MMBF4119D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| MMBF4392D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| MMBF4393D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| MMBF4391D87Z | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| MMBF4416LT3 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF4391 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4391_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4391L | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBF4391LT1 | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4391LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET Switching Transistors N-Channel |
发布紧急采购，3分钟左右您将得到回复。