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参数资料
| 型号： | MMBF4416LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 149K |
| 描述： | MOSFET SS N-CHAN VHF 30V SOT23 |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 10 |
| 晶体管类型： | N 通道 JFET |
| 额定电流： | 15mA |
| 电压 - 额定： | 30V |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMBF4416LT1OSCT |
?
Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 3
1
Publication Order Number:
MMBF4416LT1/D
MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N?Channel
Features
?
Pb?Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain?Source Voltage
VDS
30
Vdc
Drain?Gate Voltage
VDG
30
Vdc
Gate?Source Voltage
VGS
30
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR?5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 10
Device Package Shipping?
ORDERING INFORMATION
MMBF4416LT1 SOT?23 3,000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBF4416LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6A M
M6A = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF4416LT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET VHF/UHF Amplifier Transistor N-Channel |
| MMBF4416LT1G | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF4416LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTORJFETN-Channel30V V(BR)DSS5 |
| MMBF5103 | 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5103_Q | 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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