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参数资料
| 型号： | MMBF5457L99Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 文件页数： | 2/4页 |
| 文件大小： | 100K |
| 代理商： | MMBF5457L99Z |
2N5457
/
2N5458
/
2N5459
/
MMBF5457
/
MMBF5458
/
MMBF5459
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IG = 10
A, V
DS = 0
- 25
V
IGSS
Gate Reverse Current
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100
°C
- 1.0
- 200
nA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 15 V, ID = 10 nA
2N5457
2N5458
2N5459
- 0.5
- 1.0
- 2.0
- 6.0
- 7.0
- 8.0
V
VGS
Gate-Source Voltage
VDS = 15 V, ID = 100
A 2N5457
VDS = 15 V, ID = 200
A 2N5458
VDS = 15 V, ID = 400
A 2N5459
- 2.5
- 3.5
- 4.5
V
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, VGS = 0
2N5457
2N5458
2N5459
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
gfs
Forward Transfer Conductance*
VDS = 15 V, VGS = 0, f = 1.0 kHz
2N5457
2N5458
2N5459
1000
1500
2000
5000
5500
6000
mhos
gos
Output Conductance*
VDS = 15 V, VGS = 0, f = 1.0 kHz
10
50
mhos
Ciss
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
4.5
7.0
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
1.5
3.0
pF
NF
Noise Figure
VDS = 15 V, VGS = 0, f = 1.0 kHz,
RG = 1.0 megohm, BW = 1.0 Hz
3.0
dB
Transfer Characteristics
Typical Characteristics
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
N-Channel General Purpose Amplifier
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF5457LT1 | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5457LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5457LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF5458 | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5458_Q | 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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