- 您现在的位置：买卖IC网 > PDF目录95960 > MMBF5460LT3 (ON SEMICONDUCTOR) P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB PDF资料下载
参数资料
| 型号： | MMBF5460LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 151K |
| 代理商： | MMBF5460LT3 |
MMBF5460LT1
http://onsemi.com
523
1000
0.1
0.2
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10
0.5
1.0
2.0
5.0
10
r oss
,OUTPUT
RESIST
ANCE
(k
ohms)
C,
CAP
ACIT
ANCE
(pF)
10
0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
Drain–Source Voltage
0
NF
,NOISE
FIGURE
(dB)
10
RS, SOURCE RESISTANCE (k Ohms)
Figure 9. Noise Figure versus
Source Resistance
0
Figure 10. Equivalent Low Frequency Circuit
20
30
50
70
100
200
300
500
700
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
20
30
40
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
10
100
1000
10,000
NOTE:
1. Graphical data is presented for dc conditions. Tabular
data is given for pulsed conditions (Pulse Width = 630 ms,
Duty Cycle = 10%).
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
vi
Crss
Ciss
ross
Coss
| yfs | vi
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = jω Ciss
yos = jω Cosp * + 1/ross
yfs = yfs |
yrs = -jω Crss
VDS = 15 V
f = 1.0 kHz
IDSS = 3.0 mA
6.0 mA
10 mA
f = 1.0 MHz
VGS = 0
Ciss
Coss
Crss
VDS = 15 V
VGS = 0
f = 100 Hz
相关PDF资料 |
PDF描述 |
|---|---|
| MMBF5460LT3 | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| MMBF5484L99Z | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MMBF5485L99Z | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MMBF5484S62Z | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| MMBF5486S62Z | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBF5461 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5461_Q | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5462 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| MMBF5462 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL JFET, 40V, SOT-23 |
| MMBF5462_Q | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。