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参数资料
| 型号： | MMBFJ177LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 111K |
| 代理商： | MMBFJ177LT3 |
JFET Chopper
P–Channel – Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDG
25
Vdc
Reverse Gate–Source Voltage
VGS(r)
–25
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBFJ177LT1 = 6Y
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(VDS = 0, ID = 1.0 Adc)
V(BR)GSS
30
–
Vdc
Gate Reverse Current
(VDS = 0 Vdc, VGS = 20 Vdc)
IGSS
–
1.0
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
0.8
2.5
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VGS = 0, VDS = 15 Vdc)
IDSS
1.5
20
mAdc
Drain Cutoff Current
(VDS = 15 Vdc, VGS = 10 Vdc)
ID(off)
–
1.0
nAdc
Drain Source On Resistance
(ID = 500 Adc)
rDS(on)
–
300
Input Capacitance
VDS = 0, VGS = 10 Vdc
Ciss
–
11
pF
Reverse Transfer Capacitance
VDS
0, VGS
10 Vdc
f = 1.0 MHz
Crss
–
5.5
1. FR–5 = 1.0
0.75 0.062 in.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle ≤ 2%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
530
Publication Order Number:
MMBFJ177LT1/D
MMBFJ177LT1
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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