参数资料
型号: MMBR911MLT1
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 1/1页
文件大小: 322K
代理商: MMBR911MLT1
PR
EL
IM
IN
AR
Y
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright
2000
CXXXX.PDF 2000-11-06
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MMBR911MLT1
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
D E S C R I P T I O N
The MMBR911MLT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
K E Y F E A T U R E S
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
!
LNA, Oscillator, Pre-Driver
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
2.0
V
IC
Device Current
60
mA
PDISS
Power Dissipation
333
mW
TJ
Junction Temperature
150
C
TSTG
Storage Temperature
-55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
225
C/W
M
BR
91
1M
LT
1
!
High FTau-6.0 GHz
Low noise-2.9dB@1GHz
Low cost SOT23 package
SOT-23
MMBR911MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
BVCBO
IC = .1mA
IE = 0
20
V
BVCEO
IC =1.0mA
IB = 0
12
V
ICBO
VCB =15V
IE = 0
50
nA
hFE
VCE =10V
IC = 30mA
30
200
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Min.
Typ.
Max.
Units
f = 1.0 MHz
VCB = 10 V
GHz
F
CB
C
FTau
NF
G
NFmin
P
1.0
6.0
2.9
11
VCE = 10 V I = 30 mA
C
f = 1.0 GHz
VCE = 10 V I = 10 mA
C
f = 1.0 GHz
VCE = 10 V I = 10 mA
C
f = 1.0 GHz
dB
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