- 您现在的位置：买卖IC网 > PDF目录95962 > MMBT123S-13 (DIODES INC) 1000 mA, 18 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMBT123S-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 18 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 69K |
| 代理商： | MMBT123S-13 |
DS30292 Rev. 5 - 2
1 of 3
MMBT123S
www.diodes.com
Diodes Incorporated
MMBT123S
1A NPN SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Collector Current Rating
Suitable as a low voltage high current driver
Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic
Symbol
MMBT123S
Unit
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
18
V
Emitter-Base Voltage
VEBO
5V
Collector Current - Continuous
IC
1A
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
C
B
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K6D
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
T
C
U
D
O
R
P
W
E
N
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
SPICE MODEL: MMBT123S
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT1815-H-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815-L-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815-TP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT200S62Z | 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT123S-7 | 功能描述:两极晶体管 - BJT 18V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT123S-7-F | 功能描述:两极晶体管 - BJT 18V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT1616 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| MMBT1616A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:NPN Silicon Epitaxial Planar Transistor |
| MMBT1616A-G-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。