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参数资料
| 型号： | MMBT1815G-GR-AE3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 代理商： | MMBT1815G-GR-AE3-R |
MMBT1815
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-014,J
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
SOT-23
250
mW
Collector Dissipation (Ta=25
°C)
SOT-523/SOT-113/SOT-323
PC
200
mW
Collector Current
IC
150
mA
Base Current
IB
50
mA
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic = 100
μA, IE = 0
50
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic = 10mA, IB = 0
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE = 10μA, Ic = 0
5
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic = 100mA, IB = 10mA
0.1
0.25
V
Base-Emitter Saturation Voltage
VBE(SAT)
Ic = 100mA, IB = 10mA
1.0
V
Collector Cut-off Current
ICBO
VCB = 60V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VEB = 5V, Ic = 0
100
nA
DC Current Gain
hFE1
hFE2
VCE = 6V, Ic = 2mA
VCE = 6V, Ic = 150mA
120
25
700
Transition Frequency
fT
VCE = 10V,Ic = 50mA
80
MHz
Output Capacitance
COB
VCB = 10V, IE = 0, f = 1MHz
2.0
3.0
pF
Noise Figure
NF
Ic = 0.1mA, VCE = 6V
RG = 10kΩ, f = 100Hz
1.0
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
RANGE
120-240
200-400
350-700
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT1815G-BL-AC3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815G-Y-AE3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815G-Y-AL3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815G-GR-AC3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT1815G-GR-AL3-R | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT1815-GR-AC3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
| MMBT1815-GR-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
| MMBT1815-GR-AL3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
| MMBT1815-GR-AN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
| MMBT1815G-X-AC3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR |
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