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参数资料
| 型号： | MMBT200AD87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/13页 |
| 文件大小： | 519K |
| 代理商： | MMBT200AD87Z |
PN200
PN200A
MMBT200
MMBT200A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
45
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
PN200
PN200A
*MMBT200
*MMBT200A
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
SOT-23
Mark: N2 / N2A
C
B
E
TO-92
C
B
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200
/
MMBT200
/
PN200A
/
MMBT200A
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