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参数资料
| 型号： | MMBT2131T3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 115K |
| 代理商： | MMBT2131T3 |
3–1
Motorola Bipolar Power Transistor Device Data
Product Preview
General Purpose Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
V
Collector–Base Voltage
VCBO
40
V
Emitter–Base Voltage
VEBO
5.0
V
Collector Current
IC
700
mA
Base Current
IB
350
mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
PD
RqJA
342
178
366
mW
°C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
PD
RqJA
665
346
188
mW
°C/W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
40
—
Vdc
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
30
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
ICBO
—
1.0
10
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
IEBO
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
—
Vdc
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
0.25
Vdc
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.0
Vdc
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2
″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MMBT2131T1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT2131T1
MMBT2131T3
1
2
4
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
3
PNP
5
6
Motorola, Inc. 1998
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2132T1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMBT2132T3 | 功能描述:两极晶体管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2132T3_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors NPN Bipolar Junction Transistor |
| MMBT2132T3G | 功能描述:两极晶体管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222 | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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