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参数资料
| 型号： | MMBT2222A-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 66K |
| 代理商： | MMBT2222A-13 |
DS30041 Rev. 7 - 2
2 of 4
MMBT2222A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
10
nA
mA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150
°C
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
35
50
75
100
40
50
35
300
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55
°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = 10V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
25
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
60
ns
Note:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: MMBT2222A-7-F.
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P
YM
Marking Information
Device
Packaging
Shipping
MMBT2222A-7
SOT-23
3000/Tape & Reel
Ordering Information (Note 3)
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT2222A/E9 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222A/E8 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT2222A-GS18 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT2222A-GS08 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222A-13-F | 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R |
| MMBT2222A-1P | 制造商:Taitron Components Inc 功能描述:MMBT2222A-1P |
| MMBT2222A215 | 制造商:NXP Semiconductors 功能描述:SWITCHING TRANSISTOR NPN 40V 制造商:NXP Semiconductors 功能描述:TRANS NPN 40V 0.6A SOT23 |
| MMBT2222A-7 | 功能描述:两极晶体管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222A-7-04-F | 制造商:DIODES 功能描述:NPN Transistros / SOT-23 (LEAD FREE) |
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