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参数资料
| 型号： | MMBT2222AD84Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 113K |
| 代理商： | MMBT2222AD84Z |
PN2222A
/
MMBT2222A
/
MMPQ2222
/
NMT2222
/
PZT2222A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
(except MMPQ2222 and NMT2222)
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V, f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 100 kHz
8.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0, f = 100 kHz
25
pF
rb’CC
Collector Base Time Constant
IC = 20 mA, VCB = 20 V, f = 31.8 MHz
150
pS
NF
Noise Figure
IC = 100
A, V
CE = 10 V,
RS = 1.0 k
, f = 1.0 kHz
4.0
dB
Re(hie)
Real Part of Common-Emitter
High Frequency Input Impedance
IC = 20 mA, VCE = 20 V, f = 300 MHz
60
SWITCHING CHARACTERISTICS
(except MMPQ2222 and NMT2222)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
75
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
6.0
V
ICEX
Collector Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
10
nA
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 150
°C
0.01
10
A
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
10
nA
IBL
Base Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
20
nA
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V, TA = -55
°C
IC = 150 mA, VCE = 10 V*
IC = 150 mA, VCE = 1.0 V*
IC = 500 mA, VCE = 10 V*
35
50
75
35
100
50
40
300
VCE(sat)
Collector-Emitter Saturation
Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
V
td
Delay Time
VCC = 30 V, VBE(OFF) = 0.5 V,
10
ns
tr
Rise Time
IC = 150 mA, IB1 = 15 mA
25
ns
ts
Storage Time
VCC = 30 V, IC = 150 mA,
225
ns
tf
Fall Time
IB1 = IB2 = 15 mA
60
ns
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222ADW1T1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:Dual General Purpose Transistors |
| MMBT2222AE | 制造商:JIANGSU 制造商全称:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR |
| MMBT2222AF065 | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT NPN 40V 1A 3-Pin SOT-23 T/R |
| MMBT2222A-G | 功能描述:射频双极电源晶体管 VCEO=40V IC=600mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MMBT2222AG-AE3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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