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参数资料
| 型号： | MMBT2222AT |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 496K |
| 代理商： | MMBT2222AT |
MMBT2222AT
NPN General
Purpose Amplifier
Features
Capable of 150mWatts of Power Dissipation
Operating and Storage Junction Temperatures -55℃ to 150℃
Collector Current: 0.6A
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
40
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10Adc, IE=0)
75
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10Adc, IC=0)
6.0
Vdc
ICBO
Collector Cut-off Current
(VCB=70Vdc, IE=0)
100
nAdc
ICEO
Collector Cutoff Current
(VCE=35Vdc, IB=0)
100
nAdc
IEBO
Emitter Cut-off Current
(VEB=3Vdc, IC=0)
100
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=500mAdc, VCE=10Vdc)
35
50
75
100
50
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.3
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
1.2
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=10Vdec, IE=0, f=100kHz)
8.0
pF
SWITCHING CHARACTERISTICS
td
Delay Time
10
ns
tr
Rise Time
(VCC=30Vdc, VBE=0.5Vdc
IC=150mAdc, IB1=15mAdc)
25
ns
ts
Storage Time
225
ns
tf
Fall Time
(VCC=30Vdc, IC=150mAdc
IB1=IB2=15mAdc)
60
ns
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 2
2006/05/13
SOT-523
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
A
C
B
D
E
G
H
J
DIMENSIONS
K
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Marking:1P
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2222A-T | 功能描述:两极晶体管 - BJT 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2222AT_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2222AT_10 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Plastic-Encapsulate Transistors NPN Silicon |
| MMBT2222AT_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN General Purpose Amplifier |
| MMBT2222AT_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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