参数资料
型号: MMBT2907AL99Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/6页
文件大小: 59K
代理商: MMBT2907AL99Z
PN2907A
/
MMBT2907A
/
MMPQ2907
/
NMT2907
/
PZT2907A
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
PZT2907A
B
C
SOT-223
E
PN2907A
C
B
E
TO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
MMPQ2907
C
SOIC-16
E
B
E
B
E
B
E
B
NMT2907
SOT-6
Mark: .2B
C1
E1
C2
B1
E2
B2
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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