参数资料
型号: MMBT3904/E8
厂商: GENERAL SEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: SOT-23, 3 PIN
文件页数: 1/3页
文件大小: 89K
代理商: MMBT3904/E8
9/11/00
MMBT3904
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP transistor
MMBT3906 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3904.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Power Dissipation at TA = 25°C
Ptot
225(1)
mW
300(2)
Thermal Resistance Junction to Substrate Backside
R
ΘSB
320(1)
°C/W
Thermal Resistance Junction to Ambient Air
R
ΘJA
450(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1AM
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5
)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
New
Product
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
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