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参数资料
| 型号： | MMBT3904 |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 98K |
| 代理商： | MMBT3904 |
NPN General Purpose Amplifier
(continued)
Thermal Characteristics
TA = 25°C unless otherwise noted
2N3904
/
MMBT3904
/
MMPQ3904
/
PZT3904
Symbol
Characteristic
Max
Units
2N3904
*PZT3904
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
Symbol
Characteristic
Max
Units
**MMBT3904
MMPQ3904
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
1,000
8.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
357
125
240
°C/W
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I
- COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-E
M
ITTE
R
V
O
L
T
A
G
E
(
V
)
C
ESA
T
25 °C
C
ββ = 10
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
P23
0.1
1
10
100
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
C
ββ = 10
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I
- COLLECTOR CURRENT (mA)
V
-
B
A
SE
-E
M
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E
(ON
)
C
V
= 5V
CE
25 °C
125 °C
- 40 °C
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I
- COLLECTOR CURRENT (mA)
h
-
T
Y
P
ICAL
P
U
L
S
E
D
CU
RRE
NT
G
A
IN
FE
- 40 C
25 °C
C
V
= 5V
CE
125 °C
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3904 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| MMBT3904 MCC | 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT3904,215 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBT3904_08 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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