参数资料
型号: MMBT3904G-AE3-R
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: HALOGEN FREE PACKAGE-3
文件页数: 3/3页
文件大小: 116K
代理商: MMBT3904G-AE3-R
MMBT3904
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R206-012.D
TYPICAL CHARACTERISTICS
DC current gain
Collector current, IC(mA)
0.3 0.5 1
3 5
10
30 50 100
40
0
80
120
160
200
240
DC
cu
rren
tga
in
,h
FE
VCE=1V
VCE=20V
Current gain-bandwidth product
Collector current, IC(mA)
0.1
0.3 0.5 1
3 5
10
30 50 100
0.1
10
30
50
100
300
500
1000
C
urr
ent
gain-
bandwidth
p
roduct,
f
T(MH
z)
IE=0
f=1MHz
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector current, IC(mA)
0.3 0.5 1
3 5
10
30 50 100
0.1
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
10
IC=10 IB
VBE(SAT)
VCE(SAT)
S
aturati
on
vol
tage,
V
BE(
S
AT)
,V
CE
(S
A
T
)(V)
100
50
30
10
5
3
1
0
1
2
3
4
5
6
Output capacitance
Collector-base voltage, VCB(V)
Cap
acita
nce,
C
ob
(p
F
)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
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presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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