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参数资料
| 型号： | MMBT4126D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/15页 |
| 文件大小： | 532K |
| 代理商： | MMBT4126D87Z |
2N4126
MMBT4126
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10
A as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA= 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
25
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
2N4126
*MMBT4126
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
°C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: ZF
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N4126
/
MMBT4126
2N4126/MMBT4126, Rev A
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