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参数资料
| 型号： | MMBT4258D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/14页 |
| 文件大小： | 739K |
| 代理商： | MMBT4258D87Z |
PN4258
MMBT4258
PNP Switching Transistor
This device is designed for very high speed saturated switching
at collector currents to 100 mA. Sourced from Process 65.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
12
V
VCBO
Collector-Base Voltage
12
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN4258
*MMBT4258
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
C
B
E
TO-92
C
B
E
SOT-23
Mark: 78
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
PN4258
/
MMBT4258
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