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参数资料
| 型号： | MMBT5551 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 178K |
| 代理商： | MMBT5551 |
MMBT5551
NPN General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary PNP Type Available (MMBT5401)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
180
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
160
V
Emitter-base breakdown voltage
IE=10A,IC=0
VEBO
6
V
Collector-base cut-off current
VCB=120V,IE=0
ICBO
50
nA
Emitter-base cut-off current
VEB=4V,IC=0
IEBO
50
nA
VCE=5V,IC=1mA
hFE1
80
V
VCE=5V,IC=10mA
hFE2
100
300
V
DC current gain
VCE=5V,IC=150mA
hFE3
50
V
IC=10mA,IB=1mA
VCE(sat)1
0.15
V
Collector-emitter saturation voltage
IC=50mA,IB=5mA
VCE(sat)2
0.2
V
IC=10mA,IB=1mA
VBE(sat)1
1
V
Base-emitter saturation voltage
IC=50mA,IB=5mA
VBE(sat)2
1
V
Transition frequency
VCE=10V,IC=10mA,
f=100MHz
fT
100
300
MHz
Collector output capacitance
VCB=-10V,IE=0,f=1MHz
Cob
6
pF
Input capacitance
VEB=0.5V,IE=0,f=1MHz
Ciob
20
pF
Noise figure
VCE=5V,IC=0.25mA,
f=10Hz to 5.7KHz,Rs=1k
NF
8
dB
REV. 1, Nov-2010, KSNR13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT5551 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORNPN160V0.6ASOT23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR,NPN,160V,0.6A,SOT23 |
| MMBT5551 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO |
| MMBT5551_Q | 功能描述:两极晶体管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551-7 | 功能描述:两极晶体管 - BJT SS NPN 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551-7-F | 功能描述:两极晶体管 - BJT SS NPN 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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