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参数资料
| 型号： | MMBT5551L-C-AE3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 144K |
| 代理商： | MMBT5551L-C-AE3-R |
MMBT5551
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 4
www.unisonic.com.tw
QW-R206-010,F
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
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相关PDF资料 |
PDF描述 |
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| MMBT5551G-A-AE3-R | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT5551-A-AE3-R | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT5551G-C-AE3-R | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT5551-C-AE3-R | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT5551 | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT5551LT1 | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551LT1G | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5551LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT5551LT1H | 制造商:ON Semiconductor 功能描述: |
| MMBT5551LT3 | 功能描述:两极晶体管 - BJT 600mA 160V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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