参数资料
型号: MMBT589LT3G
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: LEAD FREE, CASE 318-08, TO-236, 3 PIN
文件页数: 2/5页
文件大小: 61K
代理商: MMBT589LT3G
MMBT589LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
30
Vdc
Collector Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
50
Vdc
Emitter Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
0.1
mAdc
CollectorEmitter Cutoff Current
(VCES = 30 Vdc)
ICES
0.1
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3) (Figure 1)
(IC = 1.0 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
100
80
40
300
Collector Emitter Saturation Voltage (Note 3) (Figure 3)
(IC = 0.5 A, IB = 0.05 A)
(IC = 1.0 A, IB = 0.1 A)
(IC = 2.0 A, IB = 0.2 A)
VCE(sat)
0.25
0.30
0.65
V
Base Emitter Saturation Voltage (Note 3) (Figure 2)
(IC = 1.0 A, IB = 0.1 A)
VBE(sat)
1.2
V
Base Emitter Turnon Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
1.1
V
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
100
MHz
Output Capacitance
(f = 1.0 MHz)
Cobo
15
pF
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤ 2%
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