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参数资料
| 型号： | MMBTA06 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SOT-23, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 21K |
| 代理商： | MMBTA06 |
DS30037 Rev. A-2
1 of 1
MMBTA05 / MMBTA06
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Types Available
(MMBTA55 / MMBTA56)
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBTA05
MMBTA06
Unit
Collector-Base Voltage
VCBO
60
80
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
500
mA
Power Dissipation (Note 1)
Pd
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
357
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA05 Marking: K1H, R1H
MMBTA06 Marking: K1G, R1G
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CBO
60
80
V
IC = 100
A, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CEO
60
80
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
V
IE = 100
A, IC = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICBO
100
nA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICES
100
nA
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
100
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.25
V
IC = 100mA, IB = 10mA
Base- Emitter Saturation Voltage
VBE(SAT)
1.2
V
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
100
MHz
VCE = 2.0V, IC = 10mA,
f = 100MHz
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
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| MMBTA06_D87Z | 功能描述:两极晶体管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06_L98Z | 功能描述:两极晶体管 - BJT NPN Gen Purp Amp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06_Q | 功能描述:两极晶体管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06-7 | 功能描述:两极晶体管 - BJT 80V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA06-7-01-F | 制造商:DIODES 功能描述:TRANSISTOR NPN 80V / SOT-23 (LEAD FREE) |
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