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参数资料
| 型号： | MMBTA14 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 481K |
| 代理商： | MMBTA14 |
MMBTA14
NPN General Purpose Transistor
FEATURES
For switching and amplifier applications.
Complementary PNP Types Available (MMBTA64)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current -Continuous
IC
300
mA
Collector Power Dissipation
PC
300
mW
Thermal Resistance, Junction to Ambient
RΘJA
417
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100A,IE=0
VCBO
30
V
Collector-emitter breakdown voltage
IC=100uA,IB=0
VCEO
30
V
Emitter-base breakdown voltage
IE=100A,IC=0
VEBO
10
V
Collector-base cut-off current
VCB=30V,IE=0
ICBO
0.1
uA
Emitter-base cut-off current
VEB=10V,IC=0
IEBO
0.1
uA
VCE=5V,IC=10mA
hFE1
10000
V
DC current gain
VCE=5V,IC=100mA
hFE2
20000
V
Collector-emitter saturation voltage
IC=100mA,IB=0.1mA
VCE(sat)
1.5
V
Base-emitter saturation voltage
IC=100mA,IB=0.1mA
VBE(sat)
2
V
Base-emitter voltage
IC=100mA,VCE=5V
VBE
2
V
Transition frequency
VCE=5V,IC=10mA,
f=100MHz
fT
50
MHz
Collector output capacitance
VCB=10V,IE=0,f=1MHz
Cob
12
pF
REV. 1, Oct-2010, KSNR16
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相关代理商/技术参数 |
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|---|---|
| MMBTA14 | 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Bipolar Transistor |
| MMBTA14_D87Z | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA14_NB05232 | 制造商:FAIRCHILD 功能描述:MMBTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23 |
| MMBTA14_Q | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA14-7 | 功能描述:达林顿晶体管 30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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