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参数资料
| 型号： | MMBTA42LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 75K |
| 代理商： | MMBTA42LT3 |
Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 7
1
Publication Order Number:
MMBTA42LT1/D
MMBTA42LT1,
MMBTA43LT1
MMBTA42LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
MMBTA42
MMBTA43
VCEO
300
200
Vdc
Collector-Base Voltage
MMBTA42
MMBTA43
VCBO
300
200
Vdc
Emitter-Base Voltage
MMBTA42
MMBTA43
VEBO
6.0
Vdc
Collector Current - Continuous
IC
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction-to-Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT-23 (TO-236)
CASE 318
STYLE 6
2
3
1
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1D M
G
1D
= MMBTA42LT
M1E = MMBTA43LT
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
M1E M
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA42LT3G | 功能描述:两极晶体管 - BJT 500mA 200V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA42-T | 功能描述:两极晶体管 - BJT 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA42-TP | 功能描述:两极晶体管 - BJT 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA43LT1 | 功能描述:两极晶体管 - BJT 500mA 200V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA43LT1G | 功能描述:两极晶体管 - BJT 500mA 200V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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