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参数资料
| 型号： | MMBTH81D87Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/11页 |
| 文件大小： | 721K |
| 代理商： | MMBTH81D87Z |
3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
20
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
A, I
E = 0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
3.0
V
ICBO
Collector Cutoff Current
VCB = 10 V, IE = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 2.0 V, IC = 0
100
nA
hFE
DC Current Gain
IC = 5.0 mA, VCE = 10 V
60
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5.0 mA, IB = 0.5 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 10 V
0.9
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 5.0 mA, VCE = 10 V,
f = 100 MHz
600
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.85
pF
Cce
Collector Emitter Capcitance
VCB = 10 V, IB = 0, f = 1.0 MHz
0.65
pF
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
PNP RF Transistor
(continued)
MPSH81
/
MMBTH81
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Spice Model
DC Current Gain vs
Collector Current
0.1
1
10
100
0
20
40
60
80
100
120
140
160
180
200
I - COLLECTOR CURRENT (mA)
h
-
DC
CU
RRE
N
T
G
A
IN
C
FE
V
= 1.0V
CE
-
T = 125°C
A
T = 25°C
A
T = 55°C
A
-
Collector Saturation Voltage
vs Collector Current
0.1
1
10
100
0.01
0.02
0.05
0.1
0.2
0.5
1
I - COLLECTO R CURRENT ( mA)
V
-
C
O
L
E
C
T
O
R
S
A
T
.V
O
L
T
A
G
E
(
V
)
C
-
T =
55°C
A
-
T = 25°C
A
T = 125°C
A
I
= 10 I
C
B
-
CE
(S
AT
)
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