参数资料
型号: MMBTRC103SS
厂商: DIOTEC SEMICONDUCTOR AG
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 2/2页
文件大小: 106K
代理商: MMBTRC103SS
MMBTRC101SS ... MMBTRC106SS
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhltnis 1)
GI
VO = 5 V, IO = 10 mA
MMBTRC101SS
30
MMBTRC102SS
50
MMBTRC103SS
70
MMBTRC104SS
80
MMBTRC105SS
80
MMBTRC106SS
80
Output cutoff current – Ausgangs-Reststrom
VO = 50 V
IO(off)
500 nA
Input current – Eingangsstrom
II
VI = 5 V
MMBTRC101SS
1.8 mA
MMBTRC102SS
0.88 mA
MMBTRC103SS
0.36 mA
MMBTRC104SS
0.18 mA
MMBTRC105SS
3.6 mA
MMBTRC106SS
1.8 mA
Output voltage – Ausgangs-Spannung
IO = 10 mA, II = 0.5 mA
VO(on)
0.3 V
Input voltage (on) – Eingangsspannung (Ein)
VI(on)
VO = 0.2 V, IO = 5 mA
MMBTRC101SS
2 V
MMBTRC102SS
2.4 V
MMBTRC103SS
3 V
MMBTRC104SS
5 V
MMBTRC105SS
1.1 V
MMBTRC106SS
1.3 V
Input voltage (off) – Eingangs-Spannung (Aus)
VI(off)
VO = 5 V, IO = 0.1 mA
..C101...C104..
1 V
..C105...C106..
0.5 V
Input resistor tolerance – Toleranz Eingangswiderstand
R1
-30%
+30%
Resistance ratio – Widerstandsverhltnis
R2/R1
MMBTRC101SS
0.8
1.2
MMBTRC102SS
0.8
1.2
MMBTRC103SS
0.8
1.2
MMBTRC104SS
0.8
1.2
MMBTRC105SS
0.026
0.087
MMBTRC106SS
0.055
0.185
Transition Frequency – Transitfrequenz (Transistor)
VO = 10 V, IO = 5 mA
fT
200 MHz
1
Tested with pulses tp = 300 s, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhltnis ≤ 2%
2
http://www.diotec.com/
Diotec Semiconductor AG
相关PDF资料
PDF描述
MMBV3401 35 V, SILICON, PIN DIODE
MMBV809LT3 UHF BAND, 5.3 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MMBZ5255B 28 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MMBZ6V8AL-7 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
MMDF1N05ER2 2 A, 50 V, 0.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MMBTRC104SS 制造商:Diotec 功能描述:Bulk
MMBTRC105SS 制造商:Diotec 功能描述:Bulk
MMBTRC106SS 制造商:Diotec 功能描述:Bulk
MMBTRC107 RF 功能描述:两极晶体管 - BJT PNP digital trans 10/47kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTRC108 RF 功能描述:两极晶体管 - BJT PNP digital trans 22/47kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2