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参数资料
| 型号： | MMBTRC120SS |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MMBTRC120SS |
MMBTRC116SS ... MMBTRC121SS
MMBTRC116SS ... MMBTRC121SS
NPN
Surface Mount Bias Resistor Transistors
SMD Transistoren mit Eingangsspannungsteiler
NPN
Version 2011-02-28
Dimensions - Mae [mm]
1 = In
2 = Gnd
3 = Out
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings and characteristics (TA = 25°C)
Grenz- und Kennwerte (TA = 25°C)
Resistor combinations – Widerstandskombinationen
R1 [kΩ]
R2 [kΩ]
MMBTRC116SS
1
10
MMBTRC117SS
2.2
MMBTRC118SS
2.2
10
MMBTRC119SS
4.7
10
MMBTRC120SS
10
4.7
MMBTRC121SS
47
10
Input-voltage – Eingangs-Spannung
VI
MMBTRC116SS
-5 ... +10 V
MMBTRC117SS
-10 ... +12 V
MMBTRC118SS
-5 ... +12 V
MMBTRC119SS
-7 ... +20 V
MMBTRC120SS
-10 ... +30 V
MMBTRC121SS
-15 ... +40 V
Output voltage – Ausgangs-Spannung
VO
50 V
Output current – Ausgangs-Strom
IO
100 mA
Power dissipation – Verlustleistung
Ptot
200 mW 1)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden
Diotec Semiconductor AG
http://www.diotec.com/
1
2.
5
m
ax
1.
3
±
0.
1
1.1
0.4
2.9 ±0.1
1
2
3
Type
Code
1.9
3
1
2
R1
R2
Output
Input
Ground
相关PDF资料 |
PDF描述 |
|---|---|
| MMBTRC121SS | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTRC119SS | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTRC118SS | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBV3102LT1 | UHF BAND, 22 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| MMBV3700LT | 200 V, SILICON, PIN DIODE, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBV105 | 制造商:ETL 制造商全称:E-Tech Electronics LTD 功能描述:Silicon Tuning Diode |
| MMBV105GL | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MMBV105GLT1 | 功能描述:变容二极管 30V 1.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| MMBV105GLT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMBV105GLT1G | 功能描述:变容二极管 30V 1.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
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