参数资料
型号: MMBV2107L
厂商: MOTOROLA INC
元件分类: 参考电压二极管
英文描述: HF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
文件页数: 2/6页
文件大小: 130K
代理商: MMBV2107L
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
MV2104
10.8
12
13.2
400
2.5
2.9
3.2
MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1/MV2108
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MV2111
42.3
47
51.7
150
2.5
3.0
3.2
MV2115
90
100
110
100
2.6
3.0
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop
the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a ca-
pacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an ad-
mittance bridge at the specified frequency and substitut-
ing in the following equations:
Q
+ 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[ 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which de-
fines TCC:
TCC +
CT() 85°C) – CT(–65°C)
85
) 65
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
相关PDF资料
PDF描述
MZD39 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZD4.7RL 4.7 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZP4736ATA 6.8 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZPY12RLRL 12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
MZPY39RLCRL 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
相关代理商/技术参数
参数描述
MMBV2107LT1 功能描述:变容二极管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel
MMBV2107LT1G 功能描述:变容二极管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel
MMBV2108LT1 功能描述:变容二极管 30V 24.3pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel
MMBV2108LT1 WAF 制造商:ON Semiconductor 功能描述:
MMBV2108LT1G 功能描述:变容二极管 30V 24.3pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel