参数资料
型号: MMBV3102LT1
厂商: MOTOROLA INC
元件分类: 变容二极管
英文描述: UHF BAND, 22 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
文件页数: 2/6页
文件大小: 85K
代理商: MMBV3102LT1
MMBV3102LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
TA, AMBIENT TEMPERATURE (°C)
Q,
FIGURE
OF
MERIT
(x
1000)
0
20
2.0
10
15
30
,REVERSE
CURRENT
(nA)
100
–60
0.01
0.001
0
+100
C
T
,DIODE
CAP
ACIT
ANCE
(NORMALIZED)
1.04
–75
1.02
1.00
0.98
0.96
–25
+25
+75
+125
VR = 3.0 Vdc
f = 1.0 MHz
TA = 25°C
f = 50 MHz
VR = 20 Vdc
+140
+60
+20
–20
I R
0.1
1.0
10
–50
0
+50
+100
1.03
1.01
0.99
0.97
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
40
32
24
16
8.0
0
0.3
1.0
10
20 30
VR, REVERSE VOLTAGE (VOLTS)
C
T
,DIODE
CAP
ACIT
ANCE
(pF)
36
28
20
12
4.0
f = 1.0 MHz
TA = 25°C
0.5
2.0 3.0
5.0
3.0
5.0
1.0
0.5
0.3
0.2
3.0
18
6.0
21
9.0
24
12
27
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