参数资料
型号: MMBV3700LT1
厂商: ON Semiconductor
文件页数: 2/3页
文件大小: 115K
描述: DIODE TUNING SS 200V SOT23
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 1
二极管类型: PIN - 单
电压 - 峰值反向(最大): 200V
电容@ Vr, F: 1pF @ 20V,1MHz
电阻@ Vr, F: 1 欧姆 @ 10mA,100MHz
功率耗散(最大): 200mW
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 剪切带 (CT)
其它名称: MMBV3700LT1OSCT
MMBV3700LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR
= 10
A)
V(BR)R
200
?
?
V
Diode Capacitance (VR
= 20 V, f = 1.0 MHz)
CT
?
?
1.0
pF
Series Resistance (Figure 5) (IF
= 10 mA)
RS
?
0.7
1.0
Reverse Leakage Current (VR
= 150 V)
IR
?
?
0.1
A
Reverse Recovery Time (IF
= I
R
= 10 mA)
trr
?
300
?
ns
TYPICAL CHARACTERISTICS
Figure 1. Series Resistance Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
500
400
1.0
, REVERSE CURRENT ( A)
100
0.001-60
0.01
0+100+20
+60
+140
VR
= 15 V
-20
I
R
0.1
1.0
10
3.2
2.4
1.6
0.8
0
0 4.0 12 14 162.0 6.0 8.0 10
IF, FORWARD CURRENT (mA)
R
S
, SERIES RESISTANCE (OHMS)
2.8
2.0
1.2
0.4
TA
= 25
°C
300
200
100
0
0.8 0.9
0.7
I
F
, FORWARD CURRENT (mA)
TA
= 25
°C
VR, REVERSE VOLTAGE (VOLTS)
0.1
2.0
10
8.0
0 -50-10 -20 -30
-40
6.0
4.0
1.0
0.8
0.4
0.6
0.2
TA
= 25
°C
C
T
, DIODE CAPACITANCE (pF)
μ
0.04
0.004
4.0
40
0.4
600
700
800
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