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参数资料
| 型号： | MMBZ10VALT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | PLASTIC, CASE 318, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 74K |
| 代理商： | MMBZ10VALT3 |
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
MMBZ5V6ALT1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage
Max Zener
Impedance (Note 5)
VC @ IPP
(Note 6)
QVBR
@ IT
ZZT
@ IZT
ZZK @ IZK
VC
IPP
Volts
mA
Min
Nom
Max
mA
W
mA
V
A
mV/
5C
MMBZ5V6AL
5A6
3.0
5.0
5.32
5.6
5.88
20
11
1600
0.25
8.0
3.0
1.26
MMBZ6V2AL
6A2
3.0
0.5
5.89
6.2
6.51
1.0
8.7
2.76
2.80
MMBZ6V8AL
6A8
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
3.4
MMBZ9V1AL
9A1
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
7.5
MMBZ10VAL
10A
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
7.5
(VF = 0.9 V Max @ IF = 10 mA)
40 WATTS
Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage
QVBR
@ IT
VC
IPP
Volts
nA
Min
Nom
Max
mA
V
A
mV/
5C
MMBZ12VAL
12A
8.5
200
11.40
12
12.60
1.0
17
2.35
7.5
MMBZ15VAL
15A
12
50
14.25
15
15.75
1.0
21
1.9
12.3
MMBZ18VAL
18A
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
MMBZ20VAL
20A
17
50
19.00
20
21.00
1.0
28
1.4
17.2
MMBZ27VAL
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
MMBZ33VAL
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VA | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
| MMBZ12VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 8.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23; Reverse Stand-Off Voltage Vrwm:8.5V; Breakdown Voltage Min:11.4V; Breakdown Voltage Max:12.6V; Clamping Voltage Vc Max:17V; Peak Pulse Current Ippm:2.35A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ12VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ12VAL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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