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| 型号： | MMBZ10VALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封装： | LEAD FREE, PLASTIC, CASE 318, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 74K |
| 代理商： | MMBZ10VALT3G |
MMBZ5V6ALT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 5. Pulse Waveform
V
ALUE
(%)
100
50
0
01
2
3
4
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE
IPP
2
tP
tr ≤ 10 ms
PEAK VALUE IPP
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Maximum Nonrepetitive Surge
Power, Ppk versus PW
Figure 8. Maximum Nonrepetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
°C
P
pk
,PEAK
SURGE
POWER
(W)
P
pk
,PEAK
SURGE
POWER
(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VA | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
| MMBZ12VAL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 8.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23; Reverse Stand-Off Voltage Vrwm:8.5V; Breakdown Voltage Min:11.4V; Breakdown Voltage Max:12.6V; Clamping Voltage Vc Max:17V; Peak Pulse Current Ippm:2.35A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
| MMBZ12VAL,215 | 功能描述:ESD 抑制器 Diode TVS Dual/Singl 8.5V 40W 3-Pin RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| MMBZ12VAL/DG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VAL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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