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参数资料
| 型号： | MMBZ12VALT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236 |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 70K |
| 代理商： | MMBZ12VALT1 |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MMBZ5V6ALT1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
24 WATTS
Breakdown Voltage
Max Zener
Impedance
(Note 5)
V
C
@ I
PP
(Note 6)
Device
Marking
V
RWM
Volts
I
R
@
V
RWM
A
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
V
C
V
I
PP
A
V
BR
Device
Max
mA
mV/ C
MMBZ5V6AL
5A6
3.0
5.0
5.32
5.6
5.88
20
11
1600
0.25
8.0
3.0
1.26
MMBZ6V2AL
6A2
3.0
0.5
5.89
6.2
6.51
1.0
8.7
2.76
2.80
MMBZ6V8AL
6A8
4.5
0.5
6.46
6.8
7.14
1.0
9.6
2.5
3.4
MMBZ9V1AL
9A1
6.0
0.3
8.65
9.1
9.56
1.0
14
1.7
7.5
MMBZ10VAL
10A
6.5
0.3
9.50
10
10.5
1.0
14.2
1.7
7.5
(V
F
= 0.9 V Max @ I
F
= 10 mA)
40 WATTS
I
R
@
V
RWM
nA
Breakdown Voltage
V
C
@ I
PP
(Note 6)
V
C
V
Device
Marking
V
RWM
Volts
V
BR
(Note 4)
(V)
Min
Nom
@ I
T
mA
I
PP
A
V
BR
Device
Max
mV/ C
MMBZ12VAL
12A
8.5
200
11.40
12
12.60
1.0
17
2.35
7.5
MMBZ15VAL
15A
12
50
14.25
15
15.75
1.0
21
1.9
12.3
MMBZ18VAL
18A
14.5
50
17.10
18
18.90
1.0
25
1.6
15.3
MMBZ20VAL
20A
17
50
19.00
20
21.00
1.0
28
1.4
17.2
MMBZ27VAL
27A
22
50
25.65
27
28.35
1.0
40
1.0
24.3
MMBZ33VAL
4. V
BR
measured at pulse test current I
at an ambient temperature of 25
°
C.
5. Z
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6
33A
26
50
31.35
33
34.65
1.0
46
0.87
30.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VALT1G | 功能描述:TVS二极管阵列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VALT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
| MMBZ12VDL | 制造商:NXP Semiconductors 功能描述:DIODE DUAL TVS 40W 8.5V SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23 制造商:NXP Semiconductors 功能描述:DIODE, DUAL TVS, 40W, 8.5V, SOT23; Reverse Stand-Off Voltage Vrwm:8.5V; Breakdown Voltage Min:11.4V; Breakdown Voltage Max:12.6V; Clamping Voltage Vc Max:17V; Peak Pulse Current Ippm:2.35A; Diode Case Style:SOT-23; No. of Pins:3 ;RoHS Compliant: Yes |
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